AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding
Journal
Energy Science & Engineering
Journal Volume
6
Journal Issue
1
Pages
47-55
Date Issued
2018
Author(s)
Xiong, Kanglin
Mi, Hongyi
Wu, Meng-Yin
Yin, Xin
Gong, Shaoqin
Zhou, Weidong
Shin, Jae Cheol
Li, Xiuling
Arnold, Michael
Liu, Dong
Xia, Zhenyang
Wang, Xudong
Yuan, Hao-Chih
Ma, Zhenqiang
Abstract
A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance. © 2018 The Authors. Energy Science & Engineering published by the Society of Chemical Industry and John Wiley & Sons Ltd.
Subjects
Epitaxy; heterogeneous; solar cell; thin films
Other Subjects
Aluminum gallium arsenide; Epitaxial growth; Gallium arsenide; Photoelectrochemical cells; Photovoltaic cells; Silicon solar cells; Silicon wafers; Solar cells; Thin films; Bonding interfaces; Bonding methods; Crystal qualities; Direct bonding; Epitaxial liftoff; Heterogeneous; Photovoltaic panels; Tandem solar cells; Wafer bonding
Publisher
Wiley Online Library
Type
journal article