Selective release of InP heterostructures from InP substrates
Journal
Journal of Vacuum Science & Technology B
Journal Volume
34
Journal Issue
4
Pages
278-280
Date Issued
2016
Author(s)
Tzu-Hsuan Chang
Wenjuan Fan
Dong Liu
Zhenyang Xia
Zhenqiang Ma
Shihchia Liu
Laxmy Menon
Hongjun Yang
Weidong Zhou
Jesper Berggren
Mattias Hammar
Abstract
The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.
Type
journal article