Investigation of defects in ultra-thin Al 2 O 3 films deposited on pure copper by the atomic layer deposition technique
Journal
Applied Surface Science
Journal Volume
359
Pages
533-542
Date Issued
2015
Abstract
Al 2 O 3 films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100-200°C. Oxidation trials were conducted in air at 200°C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.
SDGs
Publisher
Elsevier B.V.
Type
journal article