Improvement of oxidation resistance of copper by atomic layer deposition
Journal
Applied Surface Science
Journal Volume
258
Journal Issue
24
Pages
10128-10134
Date Issued
2012
Author(s)
Abstract
Al 2 O 3 films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200°C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al 2 O 3 films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al 2 O 3 films deposited at a substrate temperature as low as 100°C suppress oxidative attack on pure copper. The Al 2 O 3 films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al 2 O 3 film is a very promising candidate to be a protective coating for pure copper. © 2012 Elsevier B.V.
SDGs
Publisher
Elsevier B.V.
Type
journal article