Interface of sputter-deposited TiNi thin film on (100) Si wafer
Journal
Materials Science Forum
Journal Volume
327
Pages
127-130
Date Issued
2000
Author(s)
Abstract
The sputter-deposited TiNi thin films on (001) Si wafer were annealed at 400°C∼800°C for 30 minutes and their interfaces were studied by using TEM, AES, and XRD analysis. For annealing temperature below 600°C, Ni atoms are the main diffusing species of the film-substrate interface reaction and NiSi 2 null compound forms triangularly toward the Si substrate. For annealing temperature higher than 600°C, Si atoms are the main diffusing species and Ti-Ni-Si ternary compounds are observed. A Ti 4 Ni 4 Si 7 null layer with NiSi 2 islands inside, and another Ti 1 Ni 1 Si 1 null layer in between TiNi thin film and Ti 4 Ni 4 Si 7 null layer, coexist at the interface of specimen annealed at 700∼800°C.
SDGs
Publisher
Trans Tech Publ, Uetikon-Zuerich, Switzerland
Type
journal article