https://scholars.lib.ntu.edu.tw/handle/123456789/432778
Title: | High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes | Authors: | Huang Y.-T. Chen Y.-H. Ho Y.-J. Huang S.-W. Chang Y.-R. Watanabe K. Taniguchi T. Chiu H.-C. Liang C.-T. Sankar R. Chou F.-C. Chen C.-W. CHUN-WEI CHEN CHI-TE LIANG Chou, F. C. |
Issue Date: | 2018 | Publisher: | American Chemical Society | Journal Volume: | 10 | Journal Issue: | 39 | Start page/Pages: | 33450-33456 | Source: | ACS Applied Materials and Interfaces | URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85053885088&doi=10.1021%2facsami.8b10576&partnerID=40&md5=06c1ba8470339af4d3e97e9425e1b75f https://scholars.lib.ntu.edu.tw/handle/123456789/432778 |
ISSN: | 19448244 | DOI: | 10.1021/acsami.8b10576 |
Appears in Collections: | 材料科學與工程學系 |
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