High-Mobility InSe Transistors: The Role of Surface Oxides
Journal
ACS Nano
Journal Volume
11
Journal Issue
7
Pages
7362-7370
Date Issued
2017
Author(s)
Abstract
and current density of 365 μA/μm can be readily achieved without elaborate engineering of drain/source contacts or gating technique. Thickness-dependent device properties are also studied, with optimized performance shown in FETs comprising of 13 nm thick InSe. The high performance of InSe FETs with ultrathin dry oxide is attributed to the effective unpinning of the Fermi level at the metal contacts, resulting in a low Schottky barrier height of 40 meV in an optimized channel thickness.
SDGs
Publisher
American Chemical Society
Type
journal article