Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer
Journal
Advanced Materials
Journal Volume
27
Journal Issue
47
Pages
7809-7815
Date Issued
2015
Author(s)
Ho P.-H.
Chen C.-H.
Shih F.-Y.
Chang Y.-R.
Li S.-S.
Wang W.-H.
Shih M.-C.
Chen W.-T.
Chiu Y.-P.
Li M.-K.
Shih Y.-S.
Abstract
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.
Publisher
Wiley-VCH Verlag
Type
journal article