https://scholars.lib.ntu.edu.tw/handle/123456789/432821
Title: | Band gap engineering of chemical vapor deposited graphene by in situ BN doping | Authors: | Chang C.-K. Kataria S. Kuo C.-C. Ganguly A. Wang B.-Y. Hwang J.-Y. Huang K.-J. Yang W.-H. Wang S.-B. Chuang C.-H. Chen M. Huang C.-I. Pong W.-F. Song K.-J. Chang S.-J. Guo J.-H. Tai Y. Tsujimoto M. Isoda S. Chen C.-W. Chen L.-C. CHUN-WEI CHEN CHING-I HUANG Chen, L.-C. |
Issue Date: | 2013 | Journal Volume: | 7 | Journal Issue: | 2 | Start page/Pages: | 1333-1341 | Source: | ACS Nano | URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874443593&doi=10.1021%2fnn3049158&partnerID=40&md5=a809d79fc2cf288a71aff75433546721 https://scholars.lib.ntu.edu.tw/handle/123456789/432821 |
ISSN: | 19360851 | DOI: | 10.1021/nn3049158 |
Appears in Collections: | 材料科學與工程學系 |
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