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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Self-encapsulated doping of n-type graphene transistors with extended air stability
Details
Self-encapsulated doping of n-type graphene transistors with extended air stability
Journal
ACS Nano
Journal Volume
6
Journal Issue
7
Pages
6215-6221
Date Issued
2012
Author(s)
Ho P.-H.
Yeh Y.-C.
Wang D.-Y.
Li S.-S.
Chen H.-A.
Chung Y.-H.
Lin C.-C.
Wang W.-H.
Chen C.-W.
CHUN-WEI CHEN
DOI
10.1021/nn301639j
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84864242041&doi=10.1021%2fnn301639j&partnerID=40&md5=1810f0a4c8806f030a64740409af6eac
https://scholars.lib.ntu.edu.tw/handle/123456789/432830
Type
journal article