Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene
Journal
Nature Communications
Journal Volume
8
Date Issued
2017
Author(s)
Wu, H.-C.
Chaika, A.N.
Hsu, M.-C.
Huang, T.-W.
Abid, M.
Abid, M.
Aristov, V.Y.
Molodtsova, O.V.
Babenkov, S.V.
Niu, Y.
Murphy, B.E.
Krasnikov, S.A.
L?bben, O.
Liu, H.
Chun, B.S.
Janabi, Y.T.
Molotkov, S.N.
Shvets, I.V.
Lichtenstein, A.I.
Katsnelson, M.I.
Abstract
Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.
SDGs
Type
journal article