Effect of disorder on the tunnel magnetoresistance: Lattice Green's function method
Journal
Journal of Applied Physics
Journal Volume
91
Journal Issue
10
Pages
8807-8809
Date Issued
2002
Author(s)
Abstract
The influences of random disorder in the barrier on tunnel conductance (TC) and magnetoresistance (TMR) in ferromagnet (FM)/insulator (semiconductor) (I(S))/FM junctions are investigated theoretically taking into account spin-orbit (SO) interaction. The TMR decreases significantly due to the spin-flip scattering (SF) caused by the SO interaction. We have found that the SF scattering is much stronger for anti-parallel configuration of magnetization and the TMR can even be inverted when the SF scattering is beyond some critical value. The numerical calculations are performed within the single-orbital tight-binding model using the recursive Green's function method based on the extended Landauer-Büttiker formula. © 2002 American Institute of Physics.
Type
journal article