Magnetic tunneling junctions with an inserted ferromagnetic metal spacer
Journal
Journal of Magnetism and Magnetic Materials
Journal Volume
239
Journal Issue
1月3日
Pages
132-134
Date Issued
2002
Author(s)
Chen, S. P.
Abstract
A discussion on the magnetic tunneling junctions with an inserted ferromagnetic metal spacer was presented. It was noticed that another magnetic tunneling junction, which is the ferromagnet-ferromagnet-insulator-ferromagnet structure, enhances the tunneling magnetoresistance (TMR) ratio by adjusting the thickness of the ferromagnetic spacer. It was found that with an appropriate inserted layer thickness in the FE-F-I interface, the effective polarization could be larger than 41%.
SDGs
Type
journal article