Anisotropy effect of magnetoresistance in spin polarized tunneling
Journal
IEEE Transactions on Magnetics
Journal Volume
35
Journal Issue
5
Pages
2913-2915
Date Issued
1999
Author(s)
Chen, S. P.
Abstract
We calculate the influence of single-ion anisotropy in spin polarized tunneling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particular, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed.
Type
journal article