Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
Journal
Nature Communications
Journal Volume
7
Date Issued
2016
Author(s)
Diankov, G.
Amet, F.
Gallagher, P.
Lee, M.
Bestwick, A.J.
Tharratt, K.
Coniglio, W.
Jaroszynski, J.
Watanabe, K.
Taniguchi, T.
Goldhaber-Gordon, D.
Abstract
The fractional quantum Hall effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle-hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle-hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.
SDGs
Type
journal article