Interband transitions and dielectric functions of InGaSb alloys
Journal
Applied Physics Letters
Journal Volume
102
Journal Issue
10
Pages
102109
Date Issued
2013
Author(s)
Kim, T. J.
Yoon, J. J.
Byun, J. S.
Hwang, S. Y.
Aspnes, D. E.
Shin, S. H.
Song, J. D.
Chang, Y.-C.
Barange, N. S.
Kim, J. Y.
Kim, Y. D.
Abstract
We report pseudodielectric functions of In1-xGaxSb ternary alloy films from 1.5 to 6.0 eV determined by spectroscopic ellipsometry. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations. The E2′ and E2 Δ2 CP energies cross with increasing In content as a result of increasing spin-orbit splitting Δ2. © 2013 American Institute of Physics.
SDGs
Type
journal article