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College of Science / 理學院
Physics / 物理學系
Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
Details
Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
Journal
Journal of Applied Physics
Journal Volume
69
Journal Issue
18
Pages
1251-1254
Date Issued
1996
Author(s)
J. F. Chen
P. Y. Wang
J. S. Wang
N. C. Chen
X. J. Guo
YANG-FANG CHEN
DOI
10.1063/1.372004
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443068
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0012719051&doi=10.1063%2f1.372004&partnerID=40&md5=49482400dbbc1bc0a40becfb5abd6d02
Type
journal article