Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
Journal
Applied Physics Letters
Journal Volume
103
Journal Issue
21
Pages
211606-1 - 211606-5
Date Issued
2013
Author(s)
Chong, C. W.
Huang, M. J.
Han, H. C.
Lin, Y. K.
Chiu, J. M.
Lin, H. J.
Pi, T. W.
Abstract
Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.
SDGs
Publisher
American Institute of Physics
Type
journal article