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  4. Surface plasmon enhanced energy transfer between type I CdSe/ZnS and type II CdSe/ZnTe quantum dots
 
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Surface plasmon enhanced energy transfer between type I CdSe/ZnS and type II CdSe/ZnTe quantum dots

Journal
Applied Physics Letters
Journal Volume
96
Journal Issue
7
Date Issued
2010
Author(s)
Wang, C.H.
Chen, C.W.
Chen, Y.T.
Wei, C.M.
Chen, Y.F.
Lai, C.W.
Ho, M.L.
Chou, P.T.
YANG-FANG CHEN  
PI-TAI CHOU  
Mario Hofmann  
DOI
10.1063/1.3315876
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443272
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77249137840&doi=10.1063%2f1.3315876&partnerID=40&md5=6f91315060650ab4b3aecaa4b5e0cae1
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77249137840&doi=10.1063%2f1.3315876&partnerID=40&md5=6f91315060650ab4b3aecaa4b5e0cae1
Abstract
Fluorescence resonant energy transfer (FRET) has been investigated between donor-acceptor pairs of type I CdSe/ZnS and type II CdSe/ZnTe quantum dots (QDs). An Au nanoparticles assisted FRET enhancement was clearly demonstrated. It is found that the efficiency of the energy transfer depends on the excitation wavelength and is largest when in resonance with the Au surface plasmon mode. With the large tunability of the emission intensity in near infrared region, our finding paves an excellent route for creating highly efficient optoelectronic devices and bioimaging labels derived from type II QDs. © 2010 American Institute of Physics.
Other Subjects
Au nanoparticle; Au surfaces; Bio-imaging; CdSe/ZnS; Donor-acceptor pairs; Emission intensity; Excitation wavelength; Fluorescence resonant energy transfers; Near infrared region; Quantum Dot; Quantum dots; Surface plasmons; Tunabilities; Type II; Energy transfer; Gold; Optoelectronic devices; Plasmons; Semiconductor quantum dots
Type
journal article

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