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College of Science / 理學院
Physics / 物理學系
Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)
Details
Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)
Journal
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Date Issued
2018
Author(s)
MINGHWEI HONG
Lin, Y.H.
Wan, H.W.
Chen, W.S.
Cheng, Y.T.
Cheng, C.P.
Pi, T.W.
Kwo, J.
DOI
10.1109/ICSICT.2018.8564962
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443295
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060293706&doi=10.1109%2fICSICT.2018.8564962&partnerID=40&md5=f3597ac68ac0c6bb54ef2ae03dd560d1
Type
conference paper