Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 ??A comparative study

Journal

Journal of Crystal Growth

Journal Volume

477

Pages

159-163

Date Issued

2017

Author(s)

Wan, H.W.

Chang, P.

Lin, T.D.

Chang, Y.H.

Lee, W.C.

Pi, T.W.

Kwo, J.

DOI

10.1016/j.jcrysgro.2017.04.006

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443303

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018725137&doi=10.1016%2fj.jcrysgro.2017.04.006&partnerID=40&md5=a0264644cd7253f2d45420551ffd45b5

Type

journal article