Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
Journal
Microelectronic Engineering
Journal Volume
147
Pages
330-334
Date Issued
2015
Author(s)
Fu, C.H.
Lin, Y.H.
Lee, W.C.
Lin, T.D.
Chu, R.L.
Chu, L.K.
Chang, P.
Chen, M.H.
Hsueh, W.J.
Chen, S.H.
Brown, G.J.
Chyi, J.I.
Kwo, J.
Type
journal article