https://scholars.lib.ntu.edu.tw/handle/123456789/443322| Title: | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Authors: | Fu, C.H. Lin, Y.H. Lee, W.C. Lin, T.D. Chu, R.L. Chu, L.K. Chang, P. Chen, M.H. Hsueh, W.J. Chen, S.H. Brown, G.J. Chyi, J.I. Kwo, J. Hong, M. MINGHWEI HONG |
Issue Date: | 2015 | Journal Volume: | 147 | Start page/Pages: | 330-334 | Source: | Microelectronic Engineering | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443322 | DOI: | 10.1016/j.mee.2015.04.098 |
| Appears in Collections: | 物理學系 |
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