Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
Journal
Microelectronic Engineering
Journal Volume
147
Pages
330-334
Date Issued
2015
Author(s)
Fu, C.H.
Lin, Y.H.
Lee, W.C.
Lin, T.D.
Chu, R.L.
Chu, L.K.
Chang, P.
Chen, M.H.
Hsueh, W.J.
Chen, S.H.
Brown, G.J.
Chyi, J.I.
Kwo, J.
Abstract
Y2O3, as a common high κ gate dielectric, has been directly deposited on (In)GaAs, GaSb, and Ge using electron beam evaporation in ultra-high vacuum. These semiconductors have distinctly different chemical bonding and surface electronic characteristics. No interfacial passivation layer was employed. High-quality Y2O3/semiconductor interfaces have been achieved, resulting in low interfacial trap densities and high-temperature thermal stability, essential for the CMOS compatible process. Self-aligned inversion channel n-InGaAs, p-GaSb, and p-Ge MOSFETs have been fabricated with excellent device performances.
SDGs
Type
journal article