https://scholars.lib.ntu.edu.tw/handle/123456789/443340| Title: | Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces | Authors: | Chang, Y.C. Chang, W.H. Merckling, C. Kwo, J. Hong, M. MINGHWEI HONG |
Issue Date: | 2013 | Journal Volume: | 102 | Journal Issue: | 9 | Source: | Applied Physics Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443340 | DOI: | 10.1063/1.4793433 |
| Appears in Collections: | 物理學系 |
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