https://scholars.lib.ntu.edu.tw/handle/123456789/443343
Title: | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Authors: | Chang, Y.H. Lin, C.A. Liu, Y.T. Chiang, T.H. Lin, H.Y. Huang, M.L. Lin, T.D. Pi, T.W. Kwo, J. MINGHWEI HONG |
Issue Date: | 2012 | Journal Volume: | 101 | Journal Issue: | 17 | Source: | Applied Physics Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443343 | DOI: | 10.1063/1.4762833 |
Appears in Collections: | 物理學系 |
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