Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition

Journal

Applied Physics Letters

Journal Volume

101

Journal Issue

17

Date Issued

2012

Author(s)

Chang, Y.H.

Lin, C.A.

Liu, Y.T.

Chiang, T.H.

Lin, H.Y.

Huang, M.L.

Lin, T.D.

Pi, T.W.

Kwo, J.

DOI

10.1063/1.4762833

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443343

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868024251&doi=10.1063%2f1.4762833&partnerID=40&md5=f12c400ffc6eb1881af35a33887e93ac

Type

journal article