The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al 2O 3 buffer layer

Journal

CrystEngComm

Journal Volume

14

Journal Issue

5

Pages

1665-1671

Date Issued

2012

Author(s)

Liu, W.-R.

Lin, B.H.

Yang, S.

Kuo, C.C.

Li, Y.-H.

Hsu, C.-H.

Hsieh, W.F.

Lee, W.C.

Kwo, J.

DOI

10.1039/c2ce06218f

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443349

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863160998&doi=10.1039%2fc2ce06218f&partnerID=40&md5=076ff481e22fb45501a4b4bf4e1721a1

Type

journal article