Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))
Journal
Applied Physics Letters
Journal Volume
98
Journal Issue
10
Date Issued
2011
Author(s)
Lin, C.A.
Chiu, H.C.
Chiang, T.H.
Lin, T.D.
Chang, Y.H.
Chang, W.H.
Chang, Y.C.
Wang, W.-E.
Dekoster, J.
Hoffmann, T.Y.
Kwo, J.
Type
other