Structural characteristics of nanometer thick Gd2O3 films grown on GaN (0001)
Journal
Crystal Growth and Design
Journal Volume
10
Journal Issue
12
Pages
5117-5122
Date Issued
2010
Author(s)
Abstract
High-quality Gd2O3 epi-films 5−20 nm thick have been grown on GaN (0001) using molecular beam epitaxy. A detailed structural investigation was carried out by in situ reflection high energy electron diffraction, cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source. The films consist of the high-temperature monoclinic (m) phase with six rotational domains, which can be easily mistaken for being the hexagonal phase. All the domains follow the m-Gd2O3 (2̅01)⟨020⟩ ∥ GaN (0001) orientational relationship.
SDGs
Type
journal article