InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
Journal
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Pages
1180-1183
Date Issued
2010
Author(s)
Lee, W.C.
Lin, T.D.
Chu, L.K.
Chang, P.
Chang, Y.C.
Chu, R.L.
Chiu, H.C.
Lin, C.A.
Chang, W.H.
Chiang, T.H.
Lee, Y.J.
Kwo, J.
Abstract
Ultra-high-vacuum (UHV) deposited Ga 2 O 3 (Gd 2 O 3 ) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (D it 's) ~ 10 11 eV -1 cm -2 , and thermal stability at high temperatures. The high-quality GGO and interfaces of GGO/InGaAs, and /Ge enable the fabrications of inversion-channel InGaAs and Ge MOS field-effect-transistors (MOSFETs) using a self-aligned process, leading to high drain currents, transconductances (G m ), and carrier mobilities.
Type
conference paper