Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric

Journal

Microelectronic Engineering

Journal Volume

87

Journal Issue

11

Pages

2042-2045

Date Issued

2010

Author(s)

Chang, Y.C.

Chang, W.H.

Chang, Y.H.

Kwo, J.

Lin, Y.S.

Hsu, S.H.

Hong, J.M.

Tsai, C.C.

DOI

10.1016/j.mee.2010.02.013

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443380

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955510311&doi=10.1016%2fj.mee.2010.02.013&partnerID=40&md5=d9a3f0ce597ca0e59bd3fbe1fd0281e1

Type

journal article