https://scholars.lib.ntu.edu.tw/handle/123456789/443380| Title: | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Authors: | Chang, Y.C. Chang, W.H. Chang, Y.H. Kwo, J. Lin, Y.S. Hsu, S.H. Hong, J.M. Tsai, C.C. Hong, M. MINGHWEI HONG |
Issue Date: | 2010 | Journal Volume: | 87 | Journal Issue: | 11 | Start page/Pages: | 2042-2045 | Source: | Microelectronic Engineering | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443380 | DOI: | 10.1016/j.mee.2010.02.013 |
| Appears in Collections: | 物理學系 |
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