Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing
Journal
Journal of Physics D: Applied Physics
Journal Volume
43
Journal Issue
13
Date Issued
2010
Author(s)
Abstract
Molecular beam epitaxy grown Al2O3/Ga 2O3(Gd2O3)/In0.20Ga 0.80As/GaAs has been rapidly thermal annealed to 850 °C in N 2. The hetero-structure remained intact, with the In 0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga 2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 °C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology. © 2010 IOP Publishing Ltd.
SDGs
Type
journal article