Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2

Journal

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Journal Volume

28

Journal Issue

3

Pages

C3A9-C3A11

Date Issued

2010

Author(s)

Chang, P.

Lee, W.C.

Huang, M.L.

Lee, Y.J.

Kwo, J.

DOI

10.1116/1.3273942

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443387

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905930391&doi=10.1116%2f1.3273942&partnerID=40&md5=9399f1079a9297c8ddf19ed439eb97ea

Type

conference paper