Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2
Journal
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Journal Volume
28
Journal Issue
3
Pages
C3A9-C3A11
Date Issued
2010
Author(s)
Type
conference paper