https://scholars.lib.ntu.edu.tw/handle/123456789/443388| Title: | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Authors: | Lin, T.D. Chang, P. Chiu, H.C. Hong, M. Kwo, J. Lin, Y.S. Hsu, S.S.H. MINGHWEI HONG |
Issue Date: | 2010 | Journal Volume: | 28 | Journal Issue: | 3 | Start page/Pages: | C3H14-C3H17 | Source: | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443388 | DOI: | 10.1116/1.3276442 |
| Appears in Collections: | 物理學系 |
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