Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics

Journal

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Journal Volume

28

Journal Issue

3

Pages

C3H14-C3H17

Date Issued

2010

Author(s)

Lin, T.D.

Chang, P.

Chiu, H.C.

Kwo, J.

Lin, Y.S.

Hsu, S.S.H.

DOI

10.1116/1.3276442

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443388

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-77952962191&doi=10.1116%2f1.3276442&partnerID=40&md5=65fc7e8f6e2468e55fca7c03447d7166

Type

conference paper