Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)
Journal
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Journal Volume
28
Journal Issue
3
Pages
C3A17-C3A19
Date Issued
2010
Author(s)
Abstract
The strain/relaxation behavior of nanometer thick Y2O3 (111) epitaxially grown on Si (111) has been investigated with x-ray diffraction using synchrotron radiation. The authors systematically measured a series of Bragg reflections to determine the lattice parameters of Y2O3 films with thickness ranging from 1.6 to 9.5 nm. The strain state of the oxide lattice along surface normal and lateral directions is analyzed as a function of the oxide thickness. The spectra of Si 2p and Y 3d, obtained with in situ angle-resolved x-ray photoelectron spectroscopy on Y2O3 5 nm thick, showed no Y silicide but a very small incorporation of Si into the Y2O3 films at the interface.
Type
conference paper