Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)
Journal
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Journal Volume
28
Journal Issue
3
Pages
C3A17-C3A19
Date Issued
2010
Author(s)
Type
conference paper