Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal

Journal of Crystal Growth

Journal Volume

311

Journal Issue

7

Pages

1954-1957

Date Issued

2009

Author(s)

Lin, C.A.

Lin, T.D.

Chiang, T.H.

Chiu, H.C.

Chang, P.

Kwo, J.

DOI

10.1016/j.jcrysgro.2008.10.013

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443402

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349110308&doi=10.1016%2fj.jcrysgro.2008.10.013&partnerID=40&md5=cd701573a9b8f7d741c5fd71bc0dabd0

SDGs

[SDGs]SDG7

Type

journal article