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College of Science / 理學院
Physics / 物理學系
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
Details
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
Journal
Journal of Crystal Growth
Journal Volume
311
Journal Issue
7
Pages
2195-2198
Date Issued
2009
Author(s)
Chu, L.K.
Lee, W.C.
Huang, M.L.
Chang, Y.H.
Tung, L.T.
Chang, C.C.
Lee, Y.J.
Kwo, J.
MINGHWEI HONG
DOI
10.1016/j.jcrysgro.2008.10.069
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443405
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349111613&doi=10.1016%2fj.jcrysgro.2008.10.069&partnerID=40&md5=1440b8d5a02f33c1b0632f68c52d8bdb
Type
journal article