Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric

Journal

Solid-State Electronics

Journal Volume

52

Journal Issue

10

Pages

1615-1618

Date Issued

2008

Author(s)

Chen, C.P.

Lin, T.D.

Lee, Y.J.

Chang, Y.C.

Kwo, J.

DOI

10.1016/j.sse.2008.06.006

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443415

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-50849107353&doi=10.1016%2fj.sse.2008.06.006&partnerID=40&md5=354e3936b2b21291f1c05b297cc59116

Type

journal article