Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

Journal

Applied Physics Letters

Journal Volume

92

Journal Issue

25

Date Issued

2008

Author(s)

Lee, K.Y.

Lee, Y.J.

Chang, P.

Huang, M.L.

Chang, Y.C.

Kwo, J.

DOI

10.1063/1.2952826

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443418

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-46049110934&doi=10.1063%2f1.2952826&partnerID=40&md5=efd1a2d71fce8344edc67df1f9a3aca8

Type

journal article