Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
26
Journal Issue
3
Pages
1132-1135
Date Issued
2008
Author(s)
Abstract
The scalability of molecular beam epitaxy grown Ga2 O3 (Gd2 O3) In0.2 Ga0.8 AsGaAs with in situ Al2 O3 capping layers has been studied, in which the InGaAs surface Fermi level has been unpinned. The electrical and structural properties were improved with rapid thermal annealing to high temperatures of 800 °C under N2 flow. As Ga2 O3 (Gd2 O3) is scaled down to 8.5 nm, the dielectric constant maintained at 14-15, similar to those of thicker oxides, resulting in an equivalent oxide thickness of 2.3 nm. A low gate oxide leakage current density of 10-9 A cm2 at ∫ VG - Vfb ∫ =1, small flatband voltage shift (Δ Vfb), low interfacial density of states (Dit) of (1-3) × 1011 cm-2 eV-1 have been achieved. © 2008 American Vacuum Society.
Type
journal article