Growth and structural characteristics of GaN/AIN/nanothick 帠-Al 2O3/Si(111)
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
26
Journal Issue
3
Pages
1064-1067
Date Issued
2008
Author(s)
Abstract
The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (∼4.8 nm thick) γ-Al2O3 as a template/buffer. A thin layer of MBE-AlN ∼40 nm thick was inserted prior to the growth of GaN. High-resolution transmission electron microscopy (HR-TEM) and high-resolution x-ray diffraction studies indicated that both of the nanothick γ-Al 2O3 and AlN are a single crystal. Reflection high-energy electron diffraction, high-resolution x-ray scattering using synchrotron radiation, and cross-sectional HR-TEM measurements indicated an orientation relationship of GaN (0002)
AlN (0002)
γ- Al2O3 (111)
Si (111) and GaN [10-10]
AlN [10-10]
γ- Al2O 3 [2-1-1]
Si [2-1-1]. A dislocation density of 5× (108-109) cm2 in the GaN ∼0.5 μm thick was determined using cross-sectional TEM images under weak-beam dark-field conditions. © 2008 American Vacuum Society.
SDGs
Type
journal article