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College of Science / 理學院
Physics / 物理學系
1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors
Details
1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
17
Date Issued
2008
Author(s)
Shiu, K.H.
Chiang, T.H.
Chang, P.
Tung, L.T.
MINGHWEI HONG
Kwo, J.
Tsai, W.
DOI
10.1063/1.2918835
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443425
http://scholars.lib.ntu.edu.tw/handle/123456789/340174
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049083322&doi=10.1063%2f1.2918835&partnerID=40&md5=c141b75da50ace1ffff7c8f3f2ebd74d
Type
journal article