1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors

Journal

Applied Physics Letters

Journal Volume

92

Journal Issue

17

Date Issued

2008

Author(s)

Shiu, K.H.

Chiang, T.H.

Chang, P.

Tung, L.T.

Kwo, J.

Tsai, W.

DOI

10.1063/1.2918835

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443425

http://scholars.lib.ntu.edu.tw/handle/123456789/340174

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049083322&doi=10.1063%2f1.2918835&partnerID=40&md5=c141b75da50ace1ffff7c8f3f2ebd74d

Type

journal article