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College of Science / 理學院
Physics / 物理學系
Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics
Details
Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
1
Date Issued
2008
Author(s)
You, S.L.
Huang, C.C.
Wang, C.J.
Ho, H.C.
Kwo, J.
Lee, W.C.
Lee, K.Y.
Wu, Y.D.
Lee, Y.J.
MINGHWEI HONG
DOI
10.1063/1.2831717
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443430
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-38049092424&doi=10.1063%2f1.2831717&partnerID=40&md5=ea01e9f4557b80d30b4b948d5414ca92
Type
journal article