Ga2O3 (Gd2O3) / Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

Journal

Applied Physics Letters

Journal Volume

91

Journal Issue

22

Date Issued

2007

Author(s)

Zheng, J.F.

Tsai, W.

Lin, T.D.

Lee, Y.J.

Chen, C.P.

Kwo, J.

Cui, S.

Ma, T.P.

DOI

10.1063/1.2817742

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443431

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-36549063375&doi=10.1063%2f1.2817742&partnerID=40&md5=19b0ad058f7ba4f7a7fa2978b24ac547

Type

journal article