InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
Journal
2007 International Semiconductor Device Research Symposium
Start Page
1
End Page
2
Date Issued
2007
Author(s)
Chang, Y.C.
Huang, M.L.
Lee, Y.J.
Lee, K.Y.
Lin, T.D.
Kwo, J.
Liao, C.C.
Cheng, K.Y.
Lay, T.S.
Abstract
In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO 2 . However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-E G and C-V characteristics of ALD-HfO 2 /In 0.53 Ga 0.47 As/InP have been demonstrated in this work.
SDGs
Type
conference paper