InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
Journal
2007 International Semiconductor Device Research Symposium
Start Page
1
End Page
2
Date Issued
2007
Author(s)
Chang, Y.C.
Huang, M.L.
Lee, Y.J.
Lee, K.Y.
Lin, T.D.
Kwo, J.
Liao, C.C.
Cheng, K.Y.
Lay, T.S.
Type
conference paper