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College of Science / 理學院
Physics / 物理學系
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
Details
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
24
Date Issued
2006
Author(s)
Chang, C.-H.
Chiou, Y.-K.
Chang, Y.-C.
Lee, K.-Y.
Lin, T.-D.
Wu, T.-B.
MINGHWEI HONG
Kwo, J.
DOI
10.1063/1.2405387
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443451
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-33845892121&doi=10.1063%2f1.2405387&partnerID=40&md5=09aff2d17e467345136bbfb2f2055c95
Type
journal article