Structure of HfO2films epitaxially grown on GaAs (001)
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
12
Date Issued
2006
Author(s)
Abstract
High-quality HfO2 films of technologically important thickness ranging from 1.8to17nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of >8.5%.
SDGs
Type
journal article