High 庰 gate dielectrics Gd2O3and Y2O3for silicon
Journal
Applied Physics Letters
Journal Volume
77
Journal Issue
1
Pages
130-132
Date Issued
2000
Author(s)
Kwo, J.
Kortan, A.R.
Queeney, K.T.
Chabal, Y.J.
Mannaerts, J.P.
Boone, T.
Krajewski, J.J.
Sergent, A.M.
Rosamilia, J.M.
Abstract
We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (ε = 14) and Y2O3(ε = 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10-3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq, of 15 Å, and 10-6 A/cm2 at 1 V for smooth amorphous Y2O3 films (ε = 18) with a teq of only 10 Å. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements. © 2000 American Institute of Physics.
Type
journal article