Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs(001)
Journal
Applied Physics Letters
Journal Volume
76
Journal Issue
18
Pages
2526-2528
Date Issued
2000
Author(s)
Abstract
Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 Å epitaxial Gd2O3 film grown on GaAs(001). The Gd–O bond length is determined to be 2.390±0.013 Å, which corresponds to a +0.063±0.013 Å increase or a +2.7%±0.6% bond-length strain relative to the bond length in a bulk Gd2O3 powder. Using a simple model for the strained film that matches the [001] and [−110] axes of Gd2O3 with the [110] and [1–10] axes of the GaAs(001) surface, the measured bond-length increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction.
Type
journal article